Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 109
... Stoichiometric films of Bi2Te3 . n - type , 2 × 1019 electrons cm -3 Vitreous , semiconducting films of nonstoichiometric composition Stoichiometric AlSb films . d'≈ 10 Å s ̄1 Stoichiometric GaAs films . Epitaxial on ( 100 ) NaCl ...
... Stoichiometric films of Bi2Te3 . n - type , 2 × 1019 electrons cm -3 Vitreous , semiconducting films of nonstoichiometric composition Stoichiometric AlSb films . d'≈ 10 Å s ̄1 Stoichiometric GaAs films . Epitaxial on ( 100 ) NaCl ...
Page 192
... stoichiometric or very nearly stoichiometric compound ( e.g. , TiN 95 ) . At this operating point , the getter- ing pumping is saturated and , as a result , any further increase in reactive gas flow leads to a significant increase in ...
... stoichiometric or very nearly stoichiometric compound ( e.g. , TiN 95 ) . At this operating point , the getter- ing pumping is saturated and , as a result , any further increase in reactive gas flow leads to a significant increase in ...
Page 319
... stoichiometric and silicon - rich silicon oxide films can be obtained . For N2O / SiH4 mole ratios of about 100 : 1 , stoichiometric SiO2 results at 800-850 ° C , whereas a ratio of 2.2 leads to Si - rich films at 700-750 ° C [ 278 ] ...
... stoichiometric and silicon - rich silicon oxide films can be obtained . For N2O / SiH4 mole ratios of about 100 : 1 , stoichiometric SiO2 results at 800-850 ° C , whereas a ratio of 2.2 leads to Si - rich films at 700-750 ° C [ 278 ] ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength