Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 129
... STRUCTURE AND PROPERTIES OF EVAPORATED FILMS Physical and chemical properties of films critically depend on structure / morphology , defects , impurity content in the film , etc. These are in turn governed by deposition variables in ...
... STRUCTURE AND PROPERTIES OF EVAPORATED FILMS Physical and chemical properties of films critically depend on structure / morphology , defects , impurity content in the film , etc. These are in turn governed by deposition variables in ...
Page 406
... structure of the epitaxial layer . The very near band - edge emission is dominated by excitonic emission . Free ex ... structure of quantum wells can be found in Ref . 195. A low - temperature ( 2 K ) spectrum from a quantum well ...
... structure of the epitaxial layer . The very near band - edge emission is dominated by excitonic emission . Free ex ... structure of quantum wells can be found in Ref . 195. A low - temperature ( 2 K ) spectrum from a quantum well ...
Page 414
... structure . There have been several theoretical predictions for the critical thickness as a function of strain or lattice mismatch . The initial pioneering work of Matthews and Blakeslee serves as a good working estimate of this ...
... structure . There have been several theoretical predictions for the critical thickness as a function of strain or lattice mismatch . The initial pioneering work of Matthews and Blakeslee serves as a good working estimate of this ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength