Thin Film Processes, Volume 2 |
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Page 129
STRUCTURE AND PROPERTIES OF EVAPORATED FILMS Physical and
chemical properties of films critically depend on structure / morphology , defects ,
impurity content in the film , etc . These are in turn governed by deposition
variables in ...
STRUCTURE AND PROPERTIES OF EVAPORATED FILMS Physical and
chemical properties of films critically depend on structure / morphology , defects ,
impurity content in the film , etc . These are in turn governed by deposition
variables in ...
Page 406
The PL spectrum of a material contains information about the electronic structure
of the epitaxial layer . The very near band - edge emission is dominated by
excitonic emission . Free excitons , FE , and excitons bound to both donor , ( Do ,
+ 1 ...
The PL spectrum of a material contains information about the electronic structure
of the epitaxial layer . The very near band - edge emission is dominated by
excitonic emission . Free excitons , FE , and excitons bound to both donor , ( Do ,
+ 1 ...
Page 414
These processes are generally temperature - dependent , as well as being
dependent on the material combination and , perhaps , the interfacial structure .
There have been several theoretical predictions for the critical thickness as a
function ...
These processes are generally temperature - dependent , as well as being
dependent on the material combination and , perhaps , the interfacial structure .
There have been several theoretical predictions for the critical thickness as a
function ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls