Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 121
... Substrate Interactions . Substrates exposed to a glow dis- charge are bombarded by energetic neutrals , ions , and ... substrate within and / or outside the plasma zone [ 60 , 61 ] . Such bombardment can initiate a variety of reactions ...
... Substrate Interactions . Substrates exposed to a glow dis- charge are bombarded by energetic neutrals , ions , and ... substrate within and / or outside the plasma zone [ 60 , 61 ] . Such bombardment can initiate a variety of reactions ...
Page 252
... substrate . This period under high bias has several important consequences , as described in Section II : The ion - bombardment sputter cleans the surface of the substrate , the substrate is heated , the surface of the substrate is ...
... substrate . This period under high bias has several important consequences , as described in Section II : The ion - bombardment sputter cleans the surface of the substrate , the substrate is heated , the surface of the substrate is ...
Page 483
... substrates . Frieser [ 82 ] found that the deposition of epitaxial Si films from the pyrolysis of Si2Cl6 / H2 gas mixtures was accelerated when the substrate was irradiated by an Hg arc lamp . Since the lamp's 5 eV ( λ ~ 254 nm ) ...
... substrates . Frieser [ 82 ] found that the deposition of epitaxial Si films from the pyrolysis of Si2Cl6 / H2 gas mixtures was accelerated when the substrate was irradiated by an Hg arc lamp . Since the lamp's 5 eV ( λ ~ 254 nm ) ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength