Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 20
... sufficient energy by the time it strikes a gas atom to cause ionization . When this first electron strikes a gas atom with sufficient energy to ionize it , it will create an ion as well as a second electron within the chamber . Each of ...
... sufficient energy by the time it strikes a gas atom to cause ionization . When this first electron strikes a gas atom with sufficient energy to ionize it , it will create an ion as well as a second electron within the chamber . Each of ...
Page 590
... sufficient information for predict- ing performance of device structures . AES has also been used to verify that ratios of P : Si in deposited a - Si : H films were the same as the gas phase ratios of these atomic constitutents in the ...
... sufficient information for predict- ing performance of device structures . AES has also been used to verify that ratios of P : Si in deposited a - Si : H films were the same as the gas phase ratios of these atomic constitutents in the ...
Page 841
... sufficient to produce ablation produces etching in the presence of reactive gases such as CF3Br and CH , Br that is 100 times faster than ablation alone [ 135 ] . An XPS study of the etching of GaAs by HCl using 193 - nm light has been ...
... sufficient to produce ablation produces etching in the presence of reactive gases such as CF3Br and CH , Br that is 100 times faster than ablation alone [ 135 ] . An XPS study of the etching of GaAs by HCl using 193 - nm light has been ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength