Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 74
Page 219
... surface of the cathode ( 102 m / sec ) . A num- ber of factors influence the velocity of the arc spot ; the composition of the cathode , gas pressure and species , and the application of magnetic fields . Attempts to obtain even the ...
... surface of the cathode ( 102 m / sec ) . A num- ber of factors influence the velocity of the arc spot ; the composition of the cathode , gas pressure and species , and the application of magnetic fields . Attempts to obtain even the ...
Page 407
... surface , free of chemical and structural defects . Semiconductors readily form a native oxide on surfaces exposed to air . The mixture of surface oxides typically forms a thin amorphous layer of material that prevents the structural ...
... surface , free of chemical and structural defects . Semiconductors readily form a native oxide on surfaces exposed to air . The mixture of surface oxides typically forms a thin amorphous layer of material that prevents the structural ...
Page 655
... surface of sufficient size that the volume free energy of condensation overcomes the surface energy of the cluster , which would tend to make it dissociate . Free atoms diffuse on the surface until they either coalesce with a critical ...
... surface of sufficient size that the volume free energy of condensation overcomes the surface energy of the cluster , which would tend to make it dissociate . Free atoms diffuse on the surface until they either coalesce with a critical ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength