Thin Film Processes, Volume 2 |
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Page 219
There is general agreement , however , that the arc spot is small ( 10 - 8 to 10 - 4
m ) , that its current density is extremely high ( 10 to 1012 A / m2 ) , and that it
moves rapidly over the surface of the cathode ( 102 m / sec ) . A number of factors
...
There is general agreement , however , that the arc spot is small ( 10 - 8 to 10 - 4
m ) , that its current density is extremely high ( 10 to 1012 A / m2 ) , and that it
moves rapidly over the surface of the cathode ( 102 m / sec ) . A number of factors
...
Page 407
The growth of any epitaxial layer begins with the preparation of a clean surface ,
free of chemical and structural defects . Semiconductors readily form a native
oxide on surfaces exposed to air . The mixture of surface oxides typically forms a
...
The growth of any epitaxial layer begins with the preparation of a clean surface ,
free of chemical and structural defects . Semiconductors readily form a native
oxide on surfaces exposed to air . The mixture of surface oxides typically forms a
...
Page 655
The classical view of thin film nucleation [ 67 ] , developed primarily for
condensation processes of metal atoms incident on a hot substrate , assumes
that a cluster of atoms must be formed on the surface of sufficient size that the
volume free ...
The classical view of thin film nucleation [ 67 ] , developed primarily for
condensation processes of metal atoms incident on a hot substrate , assumes
that a cluster of atoms must be formed on the surface of sufficient size that the
volume free ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 20 Sep 2010 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |