Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 302
... susceptor at high speeds ( > 500 rpm ) to emulate a rotating disk flow , which creates a uniform mass transfer layer ( i.e. , uniform deposition rate ) in the absence of wall effects [ 191 , 193 , 196 ] . The pumping action of the ...
... susceptor at high speeds ( > 500 rpm ) to emulate a rotating disk flow , which creates a uniform mass transfer layer ( i.e. , uniform deposition rate ) in the absence of wall effects [ 191 , 193 , 196 ] . The pumping action of the ...
Page 308
... susceptor rotation , suscep- tor edge , and reactor geometry on film thickness uniformity and interface composition ... susceptor temperatures , generate large growth - rate and composition nonuniformities . Simple one - dimensional ...
... susceptor rotation , suscep- tor edge , and reactor geometry on film thickness uniformity and interface composition ... susceptor temperatures , generate large growth - rate and composition nonuniformities . Simple one - dimensional ...
Page 396
... Susceptor ( cm ) Fig . 6. Measured ( dashed lines ) and predicted ( solid lines ) isotherms above the susceptor for different inlet flow rates and carrier gases : ( a ) hydrogen at 2 standard liters per minute ( slm ) , ( b ) hydrogen ...
... Susceptor ( cm ) Fig . 6. Measured ( dashed lines ) and predicted ( solid lines ) isotherms above the susceptor for different inlet flow rates and carrier gases : ( a ) hydrogen at 2 standard liters per minute ( slm ) , ( b ) hydrogen ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength