Thin Film Processes, Volume 2 |
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Page 399
Characterization techniques may be categorized by the type of information they
yield . The techniques discussed here are divided into physical , electrical , and
optical characterization methods . B . Physical Characterization The composition
...
Characterization techniques may be categorized by the type of information they
yield . The techniques discussed here are divided into physical , electrical , and
optical characterization methods . B . Physical Characterization The composition
...
Page 738
The large parameter space of plasma - assisted etching and the interrelation
between different parameters very often necessitate the use of more than one
method in one particular system . The available plasma diagnostic techniques (
see ...
The large parameter space of plasma - assisted etching and the interrelation
between different parameters very often necessitate the use of more than one
method in one particular system . The available plasma diagnostic techniques (
see ...
Page 791
PATTERN - FORMATION TECHNIQUES There are four general approaches to
pattern formation in laser processing that have received considerable attention to
date : image projection , contact or proximity masking , direct writing , and ...
PATTERN - FORMATION TECHNIQUES There are four general approaches to
pattern formation in laser processing that have received considerable attention to
date : image projection , contact or proximity masking , direct writing , and ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls