Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 88
Page 402
... techniques . These techniques generally involve the controlled removal of the sample through sputtering and are , therefore , destructive of the sample . The two primary techniques for the compositional depth profiling are Auger ...
... techniques . These techniques generally involve the controlled removal of the sample through sputtering and are , therefore , destructive of the sample . The two primary techniques for the compositional depth profiling are Auger ...
Page 738
... techniques ( see also Chapter II , 1 ) are first briefly summarized . In the second part is discussed how some of these methods can be used for end - point detection . A. Plasma ... TECHNIQUES Technique / reference 738 HANS W. LEHMANN.
... techniques ( see also Chapter II , 1 ) are first briefly summarized . In the second part is discussed how some of these methods can be used for end - point detection . A. Plasma ... TECHNIQUES Technique / reference 738 HANS W. LEHMANN.
Page 791
... techniques . Each of these is dealt with in turn in this section . A. Image Projection This technique and the technique of contact masking ( Section III , B ) are the techniques normally employed in conventional photolithographic ...
... techniques . Each of these is dealt with in turn in this section . A. Image Projection This technique and the technique of contact masking ( Section III , B ) are the techniques normally employed in conventional photolithographic ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength