Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 151
... Temperature Control Stable temperature of the substrate is maintained by feedback control using either a thermocouple or an optical pyrometer . Inside the manipula- tor , there is provision for placing a thermocouple junction in ...
... Temperature Control Stable temperature of the substrate is maintained by feedback control using either a thermocouple or an optical pyrometer . Inside the manipula- tor , there is provision for placing a thermocouple junction in ...
Page 407
... temperature region , the growth rate is controlled by surface kinetics and displays a strong Arrhenius - type temperature de- pendence . Growth at temperatures between ~ 500 and ~ 800 ° C is charac- terized by a weak or temperature ...
... temperature region , the growth rate is controlled by surface kinetics and displays a strong Arrhenius - type temperature de- pendence . Growth at temperatures between ~ 500 and ~ 800 ° C is charac- terized by a weak or temperature ...
Page 639
... temperature - dependent distribu- tion using a Kirchoff transformation [ 286 ] . For semiconductors such as Si and GaAs , K decreases with tempera- ture , and temperature - dependent calculations yield significantly higher temperatures ...
... temperature - dependent distribu- tion using a Kirchoff transformation [ 286 ] . For semiconductors such as Si and GaAs , K decreases with tempera- ture , and temperature - dependent calculations yield significantly higher temperatures ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength