Thin Film Processes, Volume 2 |
From inside the book
Results 1-3 of 72
Page 297
TABLE II DIMENSIONLESS PARAMETER GROUPS IN CVD Name Definition
Physical interpretation Typical order of magnitude Knudsen < 10 - 2 Prandtl
mean free path characteristic length momentum diffusivity thermal diffusivity
momentum ...
TABLE II DIMENSIONLESS PARAMETER GROUPS IN CVD Name Definition
Physical interpretation Typical order of magnitude Knudsen < 10 - 2 Prandtl
mean free path characteristic length momentum diffusivity thermal diffusivity
momentum ...
Page 810
For thermal reactions with a scanned cw beam , rates are not necessarily linearly
proportional to the beam dwell time . For the thermal reaction of GaAs with CCl4 ,
a beam dwell time of 2 s produces an etch rate of 9 um / min , while a dwell ...
For thermal reactions with a scanned cw beam , rates are not necessarily linearly
proportional to the beam dwell time . For the thermal reaction of GaAs with CCl4 ,
a beam dwell time of 2 s produces an etch rate of 9 um / min , while a dwell ...
Page 844
etched using the laser to enhance a thermal reaction ( 266 ) , and borosilicate
glass has been etched using laser generation of CF2 ( 275 ) . Laser heating has
been used to increase the reaction of sapphire with plasma - generated reactants
...
etched using the laser to enhance a thermal reaction ( 266 ) , and borosilicate
glass has been etched using laser generation of CF2 ( 275 ) . Laser heating has
been used to increase the reaction of sapphire with plasma - generated reactants
...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
20 other sections not shown
Other editions - View all
Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls