Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 297
... thermal diffusivity ~ 0.7 Schmidt Sc 210 ν momentum diffusivity 1-10 D mass diffusivity ( v ) L momentum flux by convection Reynolds Re 10-1-102 ν momentum flux by diffusion thermal flux by convection Peclet ( thermal ) Peh = Re Pr 10-1 ...
... thermal diffusivity ~ 0.7 Schmidt Sc 210 ν momentum diffusivity 1-10 D mass diffusivity ( v ) L momentum flux by convection Reynolds Re 10-1-102 ν momentum flux by diffusion thermal flux by convection Peclet ( thermal ) Peh = Re Pr 10-1 ...
Page 810
... thermal reactions with a scanned cw beam , rates are not necessarily linearly proportional to the beam dwell time . For the thermal reaction of GaAs with CCl4 , a beam dwell time of 2 s produces an etch rate of 9 μm / min , while a ...
... thermal reactions with a scanned cw beam , rates are not necessarily linearly proportional to the beam dwell time . For the thermal reaction of GaAs with CCl4 , a beam dwell time of 2 s produces an etch rate of 9 μm / min , while a ...
Page 844
... thermal mechanism [ 31 , 32 ] . Laser - induced melting of an alumina / TiC ceramic has produced very rapid etching by KOH [ 210 ] . Both TiC and TiB2 have been etched in a few torr of Cl2 during heating with a laser [ 276 ] . The ...
... thermal mechanism [ 31 , 32 ] . Laser - induced melting of an alumina / TiC ceramic has produced very rapid etching by KOH [ 210 ] . Both TiC and TiB2 have been etched in a few torr of Cl2 during heating with a laser [ 276 ] . The ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength