Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 5
Page 287
... thermodynamic concepts involved in equi- librium computations have already been discussed in Ref . 1 ( pp . 264–268 ) , the treatment will be brief and focus on aspects not covered previously . The equilibrium composition at constant ...
... thermodynamic concepts involved in equi- librium computations have already been discussed in Ref . 1 ( pp . 264–268 ) , the treatment will be brief and focus on aspects not covered previously . The equilibrium composition at constant ...
Page 429
... thermodynamic equilibrium at the growth front , would be dictated by the activity of dopant in the gas phase adjacent to the growing film . The kinetics of re - evaporation for these compounds is too slow to set up such an equilibrium ...
... thermodynamic equilibrium at the growth front , would be dictated by the activity of dopant in the gas phase adjacent to the growing film . The kinetics of re - evaporation for these compounds is too slow to set up such an equilibrium ...
Page 527
... thermodynamic equilibrium . In nonequilibrium or " cold " plasmas , the electrons and ions are more ener- getic than the neutral species . Most of the glow discharges used for thin film plasma deposition are created by subjecting the ...
... thermodynamic equilibrium . In nonequilibrium or " cold " plasmas , the electrons and ions are more ener- getic than the neutral species . Most of the glow discharges used for thin film plasma deposition are created by subjecting the ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength