Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 84
Page 157
... thickness . Very high quality thin films may be produced until a critical thickness is reached , at which the strain relaxes through the formation of dislocations . Therefore , to fabricate practical heterostructures , one must realize ...
... thickness . Very high quality thin films may be produced until a critical thickness is reached , at which the strain relaxes through the formation of dislocations . Therefore , to fabricate practical heterostructures , one must realize ...
Page 414
... thickness as shown in Fig . 11. The exact maximum thickness prior to the formation of extended defects , commonly referred to as the critical thickness , is materials - specific . Defect generation proceeds through a nucleation ...
... thickness as shown in Fig . 11. The exact maximum thickness prior to the formation of extended defects , commonly referred to as the critical thickness , is materials - specific . Defect generation proceeds through a nucleation ...
Page 510
... thickness and withdrawal rate and film thickness and oxide content are derived with all of the necessary assumptions . Two simple relationships are illustrated . In Fig . 3 , it is shown that the film thickness increases with increasing ...
... thickness and withdrawal rate and film thickness and oxide content are derived with all of the necessary assumptions . Two simple relationships are illustrated . In Fig . 3 , it is shown that the film thickness increases with increasing ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength