Thin Film Processes, Volume 2 |
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Page xiii
Preface Thin Film Processes II was developed to provide a completely new
sequel to Thin Film Processes , which was published in 1978 . The first book
included reviews of 11 classes of thin film deposition and etching processes from
a ...
Preface Thin Film Processes II was developed to provide a completely new
sequel to Thin Film Processes , which was published in 1978 . The first book
included reviews of 11 classes of thin film deposition and etching processes from
a ...
Page 5
TABLE I OTHER THIN FILM BOOKS AND REFERENCES TO PROCESSES Not
COVERED IN THIS BOOK Topic References Thin film deposition and etching
books published after 1977 Techniques for preparing substrates for film
deposition ...
TABLE I OTHER THIN FILM BOOKS AND REFERENCES TO PROCESSES Not
COVERED IN THIS BOOK Topic References Thin film deposition and etching
books published after 1977 Techniques for preparing substrates for film
deposition ...
Page 255
The presence of such a layer reduces the emission of microdroplets because of
both the high melting temperature of the compound and the much higher are
velocity reached on such materials . VI . THIN FILM DEPOSITION The earliest
reports ...
The presence of such a layer reduces the emission of microdroplets because of
both the high melting temperature of the compound and the much higher are
velocity reached on such materials . VI . THIN FILM DEPOSITION The earliest
reports ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls