Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 18
... tion potential . A. Collisional Processes Of interest to generating and sustaining plasmas , as well as the forma- tion of various excited and metastable states of species within the plasma , are the various collisional processes that ...
... tion potential . A. Collisional Processes Of interest to generating and sustaining plasmas , as well as the forma- tion of various excited and metastable states of species within the plasma , are the various collisional processes that ...
Page 635
... tion process by an adsorbed layer . The presence of the adsorbed layer is sig- nificant not only because of the increased concentration of reactant at the surface , but also because of shifts in the absorption spectrum . The absorp- tion ...
... tion process by an adsorbed layer . The presence of the adsorbed layer is sig- nificant not only because of the increased concentration of reactant at the surface , but also because of shifts in the absorption spectrum . The absorp- tion ...
Page 687
... tion function . Unfortunately , information on ƒ ( e ) and σ is generally un- available for the types of molecules used in plasma etching . ƒ ( e ) can to a reasonable degree of accuracy be approximated by a Maxwellian distribu- tion ...
... tion function . Unfortunately , information on ƒ ( e ) and σ is generally un- available for the types of molecules used in plasma etching . ƒ ( e ) can to a reasonable degree of accuracy be approximated by a Maxwellian distribu- tion ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength