Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 453
... Torr ) 0.8 6 + ∞ T σ ( 1 Torr ) 0 200 220 Monomer Concentration 1.0 T = 373 K 0.6 0.4 T 33 % 0.2- 4 % 0.0 10-6 10-4 240 T = 295 K 10-2 Pressure ( Torr ) 260 100 102 Wavelength ( nm ) Fig . 6. Expanded view of the TMA absorption ...
... Torr ) 0.8 6 + ∞ T σ ( 1 Torr ) 0 200 220 Monomer Concentration 1.0 T = 373 K 0.6 0.4 T 33 % 0.2- 4 % 0.0 10-6 10-4 240 T = 295 K 10-2 Pressure ( Torr ) 260 100 102 Wavelength ( nm ) Fig . 6. Expanded view of the TMA absorption ...
Page 636
... TORR 3 TORR 2. TORR 1 TORR 60 Fig . 7. Ultraviolet absorption spectrum of Cd ( CH3 ) 2 : a ) gas phase ; b ) chemisorbed monolayer ; c ) physisorbed layers at 0 ° C for four gas pressures . b ) and c ) are on fused silica . ( After Ref ...
... TORR 3 TORR 2. TORR 1 TORR 60 Fig . 7. Ultraviolet absorption spectrum of Cd ( CH3 ) 2 : a ) gas phase ; b ) chemisorbed monolayer ; c ) physisorbed layers at 0 ° C for four gas pressures . b ) and c ) are on fused silica . ( After Ref ...
Page 681
... Torr 0.01 - 0.2 Torr 0.1 - 1 Torr lon beam assisted chem . etch . 104 - 103 Torr 1074 - 10-1 Torr Fig . 4. Categories of dry etching methods and typical energy and pressure ranges . ( Reproduced by permission from Ref . 22. ) v - 1 ...
... Torr 0.01 - 0.2 Torr 0.1 - 1 Torr lon beam assisted chem . etch . 104 - 103 Torr 1074 - 10-1 Torr Fig . 4. Categories of dry etching methods and typical energy and pressure ranges . ( Reproduced by permission from Ref . 22. ) v - 1 ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength