Thin film processes IIThis sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Key Features * Provides an all-new sequel to the 1978 classic, Thin Film Processes * Introduces new topics, and several key topics presented in the original volume are updated * Emphasizes practical applications of major thin film deposition and etching processes * Helps readers find the appropriate technology for a particular application |
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Page 59
The second uses a multipole confinement, typically created by fixed, permanent
magnets. The axial ECR device is shown schematically in Fig. 47. The device
consists of a source region, with typically two large electromagnet coils just
outside ...
The second uses a multipole confinement, typically created by fixed, permanent
magnets. The axial ECR device is shown schematically in Fig. 47. The device
consists of a source region, with typically two large electromagnet coils just
outside ...
Page 338
employs group V halides (typically chlorides). The deposition is carried out in hot-
wall reactors at atmospheric pressure and growth temperatures in the range 650-
750°C. Typical growth rates are 1-5 /mi/h. In order to deposit uniform, ...
employs group V halides (typically chlorides). The deposition is carried out in hot-
wall reactors at atmospheric pressure and growth temperatures in the range 650-
750°C. Typical growth rates are 1-5 /mi/h. In order to deposit uniform, ...
Page 404
Measurement structures typically consists of Schottky barriers formed by a metal
or liquid electrolyte contact to the surface of the semiconductor. The carrier
concentration profile is then obtained by measurement of the capacitance-
voltage ...
Measurement structures typically consists of Schottky barriers formed by a metal
or liquid electrolyte contact to the surface of the semiconductor. The carrier
concentration profile is then obtained by measurement of the capacitance-
voltage ...
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactive reactor refractory metal region remote PECVD RHEED semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric structure substrate substrate temperature susceptor target techniques Technol thermal thickness thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength
Bibliographic information
| Title | Thin film processes II Volume 2 of Thin Film Processes, John L. Vossen |
| Authors | John L. Vossen, Werner Kern |
| Editors | John L. Vossen, Werner Kern |
| Edition | illustrated |
| Publisher | Academic Press, 1991 |
| Original from | the University of Michigan |
| Digitized | 20 Sep 2010 |
| ISBN | 0127282513, 9780127282510 |
| Length | 866 pages |
| Subjects | › › Technology & Engineering / Electronics / Semiconductors Technology & Engineering / Material Science Thin films |
| Export Citation | BiBTeX EndNote RefMan |