Thin Film Processes, Volume 2 |
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Page 59
The second uses a multipole confinement , typically created by fixed , permanent
magnets . The axial ECR device is shown schematically in Fig . 47 . The device
consists of a source region , with typically two large electromagnet coils just ...
The second uses a multipole confinement , typically created by fixed , permanent
magnets . The axial ECR device is shown schematically in Fig . 47 . The device
consists of a source region , with typically two large electromagnet coils just ...
Page 338
employs group V halides ( typically chlorides ) . The deposition is carried out in
hot - wall reactors at atmospheric pressure and growth temperatures in the range
650 – 750°C . Typical growth rates are 1 - 5 um / h . In order to deposit uniform ...
employs group V halides ( typically chlorides ) . The deposition is carried out in
hot - wall reactors at atmospheric pressure and growth temperatures in the range
650 – 750°C . Typical growth rates are 1 - 5 um / h . In order to deposit uniform ...
Page 404
Measurement structures typically consists of Schottky barriers formed by a metal
or liquid electrolyte contact to the surface of the semiconductor . The carrier
concentration profile is then obtained by measurement of the capacitance -
voltage ...
Measurement structures typically consists of Schottky barriers formed by a metal
or liquid electrolyte contact to the surface of the semiconductor . The carrier
concentration profile is then obtained by measurement of the capacitance -
voltage ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls