Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 49
... uniformity , and various shields must be placed near the cathode to help " shape " the uniformity by absorbing a fraction of the flux . An alternative to translating the sample to achieve good uniformity is to move the magnet array ...
... uniformity , and various shields must be placed near the cathode to help " shape " the uniformity by absorbing a fraction of the flux . An alternative to translating the sample to achieve good uniformity is to move the magnet array ...
Page 144
... uniformity result [ 10 ] . Figure 5 shows the geometry of a conical cell with respect to the substrate , where D is the radius of the substrate , L is the distance from the top of the cell to the substrate center , A is the opening of ...
... uniformity result [ 10 ] . Figure 5 shows the geometry of a conical cell with respect to the substrate , where D is the radius of the substrate , L is the distance from the top of the cell to the substrate center , A is the opening of ...
Page 695
... Uniformity Etch rate Selectivity with respect to mask Selectivity with respect to underlying layer Loading effect Profile ( trench type or taper ) Temperature of substrate surface Damage Contamination Effluent gas ( Safety ! ) Residence ...
... Uniformity Etch rate Selectivity with respect to mask Selectivity with respect to underlying layer Loading effect Profile ( trench type or taper ) Temperature of substrate surface Damage Contamination Effluent gas ( Safety ! ) Residence ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength