Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 15
... usually much too small to cause physical sputtering , but it is very efficient in dislodging weakly bound absorbents from the chamber wall . B. Floating Potential If an electrically floating surface is placed in contact with the plasma ...
... usually much too small to cause physical sputtering , but it is very efficient in dislodging weakly bound absorbents from the chamber wall . B. Floating Potential If an electrically floating surface is placed in contact with the plasma ...
Page 181
... usually found when 0.3 < T / Tm < 0.5 , which is associated with significant adatom diffusion on grain surfaces ... ( usually 10–30 eV ) . The ion energies can be increased by applying a negative bias to the substrate . The upper limit to ...
... usually found when 0.3 < T / Tm < 0.5 , which is associated with significant adatom diffusion on grain surfaces ... ( usually 10–30 eV ) . The ion energies can be increased by applying a negative bias to the substrate . The upper limit to ...
Page 754
... usually 15-20 % of the beam voltage . Reduc- tion of background pressure will also decrease this type of accelerator ... usually not of much interest , because although high current densities are possible , the uniformity is usually poor ...
... usually 15-20 % of the beam voltage . Reduc- tion of background pressure will also decrease this type of accelerator ... usually not of much interest , because although high current densities are possible , the uniformity is usually poor ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength