Thin Film Processes, Volume 2 |
From inside the book
Results 1-3 of 87
Page 87
INERT GAS AT ATMOSPHERIC PRESSURE STEERING HIGH VACUUM
UNWIND HEATING ZONE tog 710010 hohoi ELECTRON VACUUM | BEAM
VACUUM PUMPING PUMPING Boo DEGREASE SEAL PROCESS SEAL COOL
REWIND ...
INERT GAS AT ATMOSPHERIC PRESSURE STEERING HIGH VACUUM
UNWIND HEATING ZONE tog 710010 hohoi ELECTRON VACUUM | BEAM
VACUUM PUMPING PUMPING Boo DEGREASE SEAL PROCESS SEAL COOL
REWIND ...
Page 218
THE CATHODIC ARC A . Vacuum Arcs As Ecker ( 18 ) notes , the term vacuum
arc is a paradox because , if a vacuum exists , there can be no arc , and vice
versa . The term vacuum arc , as employed here , means an arc sustained by
material ...
THE CATHODIC ARC A . Vacuum Arcs As Ecker ( 18 ) notes , the term vacuum
arc is a paradox because , if a vacuum exists , there can be no arc , and vice
versa . The term vacuum arc , as employed here , means an arc sustained by
material ...
Page 777
In removing the ion - beam heat input , the basic problem is that heat transfer in a
vacuum is poor . In atmosphere , the air and adsorbed layers of water vapor and
hydrocarbons provide good thermal contact between parts that are bolted or ...
In removing the ion - beam heat input , the basic problem is that heat transfer in a
vacuum is poor . In atmosphere , the air and adsorbed layers of water vapor and
hydrocarbons provide good thermal contact between parts that are bolted or ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
20 other sections not shown
Other editions - View all
Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls