Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 164
... various growth parameters . The microprocessor also takes over the repetitive tasks of ramping and maintaining the temperature profiles of the substrate and source ovens , sequencing and operating the shutters , and updating the growth ...
... various growth parameters . The microprocessor also takes over the repetitive tasks of ramping and maintaining the temperature profiles of the substrate and source ovens , sequencing and operating the shutters , and updating the growth ...
Page 304
... various terms of the modeling equations are given in reviews [ 12 , 169 , 170 ] and representative studies [ 186 , 193 , 196 , 212 , 213 ] . 2. Examples of CVD Reactor Models There have been numerous modeling studies of CVD reactors ...
... various terms of the modeling equations are given in reviews [ 12 , 169 , 170 ] and representative studies [ 186 , 193 , 196 , 212 , 213 ] . 2. Examples of CVD Reactor Models There have been numerous modeling studies of CVD reactors ...
Page 685
... various reactions occurring in molecular plasmas defies a com- prehensive discussion . In addition , the general ... various species in a glow discharge . concentration ranges for the various species in a glow discharge V - 1 . PLASMA ...
... various reactions occurring in molecular plasmas defies a com- prehensive discussion . In addition , the general ... various species in a glow discharge . concentration ranges for the various species in a glow discharge V - 1 . PLASMA ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength