Thin Film Processes, Volume 2 |
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Page 138
A . Wafer Introduction , Load - Lock , and Transfer Attaining UHV is a time -
consuming and painstaking practice , so it is necessary to keep the system under
... Prepared wafers are placed in cassettes before being loaded into the system .
A . Wafer Introduction , Load - Lock , and Transfer Attaining UHV is a time -
consuming and painstaking practice , so it is necessary to keep the system under
... Prepared wafers are placed in cassettes before being loaded into the system .
Page 315
Single - Wafer Reactors Reactors designed for the processing one wafer ( 200 -
mm diameter and larger ) at a time are based on cold - wall LPCVD at high
deposition rates with cassette - to - cassette robotic wafer handling . The systems
are ...
Single - Wafer Reactors Reactors designed for the processing one wafer ( 200 -
mm diameter and larger ) at a time are based on cold - wall LPCVD at high
deposition rates with cassette - to - cassette robotic wafer handling . The systems
are ...
Page 723
Since so many wafers can be etched simultaneously in a hexode system , the
requirements for each rates can be relaxed ... system are usually in the range of
45 - 90 nm / min , with uniformities of £ 5 - 10 % ( within one wafer , wafer - to -
wafer ...
Since so many wafers can be etched simultaneously in a hexode system , the
requirements for each rates can be relaxed ... system are usually in the range of
45 - 90 nm / min , with uniformities of £ 5 - 10 % ( within one wafer , wafer - to -
wafer ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
20 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 20 Sep 2010 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |