Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 138
... wafer transfer schemes have been devised . Prepared wafers are placed in cassettes before being loaded into the ... wafer cassette moderately ( > 100 ° C ) in this chamber to drive off residual moisture before wafers are transferred to ...
... wafer transfer schemes have been devised . Prepared wafers are placed in cassettes before being loaded into the ... wafer cassette moderately ( > 100 ° C ) in this chamber to drive off residual moisture before wafers are transferred to ...
Page 315
... Wafer Reactors Reactors designed for the processing one wafer ( 200 - mm diameter and larger ) at a time are based on cold - wall LPCVD at high deposition rates with cassette - to - cassette robotic wafer handling . The systems are con ...
... Wafer Reactors Reactors designed for the processing one wafer ( 200 - mm diameter and larger ) at a time are based on cold - wall LPCVD at high deposition rates with cassette - to - cassette robotic wafer handling . The systems are con ...
Page 723
... wafers has so far not been attempted . As the wafer diameters continue to increase ( and the corresponding invest- ment per wafer gets larger ) , one notices a definite move away from multi- wafer etchers towards single - wafer systems ...
... wafers has so far not been attempted . As the wafer diameters continue to increase ( and the corresponding invest- ment per wafer gets larger ) , one notices a definite move away from multi- wafer etchers towards single - wafer systems ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength