Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 645
... yield and distribution of low - energy secondaries is of prime importance . The yield of secondary electrons can vary dramatically depending on the substrate material and primary energy [ 49 ] . Generally , yields are highest at primary ...
... yield and distribution of low - energy secondaries is of prime importance . The yield of secondary electrons can vary dramatically depending on the substrate material and primary energy [ 49 ] . Generally , yields are highest at primary ...
Page 648
... yield ( sputter yield ) of the deposited material . ( Simultaneous removal of the deposit is usually important only for ion sputtering , but evaporation of the deposit may occur for high- temperature thermal processes - or desorption of ...
... yield ( sputter yield ) of the deposited material . ( Simultaneous removal of the deposit is usually important only for ion sputtering , but evaporation of the deposit may occur for high- temperature thermal processes - or desorption of ...
Page 761
... yield ( from Ref . 15 ) is indicated in Fig . 2. The etch rate is proportional to sputter yield , so that the variation of etch rate for a constant ion current density would have a similar shape . In Fig . 2b , the sputter yield is ...
... yield ( from Ref . 15 ) is indicated in Fig . 2. The etch rate is proportional to sputter yield , so that the variation of etch rate for a constant ion current density would have a similar shape . In Fig . 2b , the sputter yield is ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength