Semiconductor Devices and Integrated ElectronicsFor some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design. |
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Page 142
... bias value of 10-5 A corresponds to an R , value of about 2600 ohms at 300 ° K , if Io >> Is . In a detector diode of normal barrier height , op between 0.5 and 0.9 eV , the Is value is small and a bias current lo must be used . This is ...
... bias value of 10-5 A corresponds to an R , value of about 2600 ohms at 300 ° K , if Io >> Is . In a detector diode of normal barrier height , op between 0.5 and 0.9 eV , the Is value is small and a bias current lo must be used . This is ...
Page 143
... BIASED ZERO - BIAS GERMANIUM SCHOTTKY SCHOTTKY TUNNEL GaAs TUNNEL CIRCUIT CONFIGURATION RF 王 VIDEO 100 BIAS to 300μA 0 0 0 TSS in dBm ( 2 - MHz VIDEO BW , NF = 3dB ) VOLTAGE SENSITIVITY K ( mV / mW ) VIEDO RESISTANCE N ( SL , SQUARE ...
... BIASED ZERO - BIAS GERMANIUM SCHOTTKY SCHOTTKY TUNNEL GaAs TUNNEL CIRCUIT CONFIGURATION RF 王 VIDEO 100 BIAS to 300μA 0 0 0 TSS in dBm ( 2 - MHz VIDEO BW , NF = 3dB ) VOLTAGE SENSITIVITY K ( mV / mW ) VIEDO RESISTANCE N ( SL , SQUARE ...
Page 159
... bias current is not always practical since the increased current demand on the driver stage tends to slow the rise time of the bias current . From Fig . 3.19 if the insertion loss specification requires a series resistance of not more ...
... bias current is not always practical since the increased current demand on the driver stage tends to slow the rise time of the bias current . From Fig . 3.19 if the insertion loss specification requires a series resistance of not more ...
Contents
MetalSemiconductor SchottkyBarrier Diodes | 85 |
Microwave Applications of Diodes Varactors | 137 |
Bipolar Junction Transistors | 195 |
Copyright | |
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amplifier Appl applications avalanche bandgap barrier height bias bipolar transistors capacitance capacitor cathode channel characteristics charge charge-coupled devices chip cm² cm³ collector depletion region detector Devices Meeting Technical diffusion Discuss doping drain effect efficiency electric Electron Devices Meeting emission emitter energy epitaxial field frequency GaAs gain gate heterojunction hole IEEE International Electron IEEE Trans Impatt Impatt diodes injection input integrated circuit interface International Electron Devices laser layer Lett lifetime logic McGraw-Hill Meeting Technical Digest memory metal Microwave minority carrier modulation MOSFET noise optical oscillator output oxide p-n junction p-type parameters permission from IEEE Photovoltaic Phys Proc pulse recombination Reprinted with permission resistance reverse Schottky barrier Schottky diode sensor shown in Fig signal silicon solar cells Solid-State Circuits Solid-State Electronics structure substrate surface switching temperature thermal thickness thyristor tunnel diode turn-on voltage York