Semiconductor Devices and Integrated ElectronicsFor some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design. |
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Page 359
... possible by the provision of interstage coupling networks , as shown in Fig . 6.23 , that level the gain over the required band by attenuating at the low end and passing at the high frequency end where the MESFET gain is diminished ...
... possible by the provision of interstage coupling networks , as shown in Fig . 6.23 , that level the gain over the required band by attenuating at the low end and passing at the high frequency end where the MESFET gain is diminished ...
Page 679
... possible . This has been termed a limited - space - charge accumulation ( LSA ) mode since calculations show that apart from an accumulation layer near the cathode , there is little space - charge formation . The mathematical details of ...
... possible . This has been termed a limited - space - charge accumulation ( LSA ) mode since calculations show that apart from an accumulation layer near the cathode , there is little space - charge formation . The mathematical details of ...
Page 783
... possible . Maximum possible band bending has been obtained if the bottom of the notch approximately lines up with the valence bandedge in the bulk . Furthermore , the bending should take place in the shortest possible distance so that ...
... possible . Maximum possible band bending has been obtained if the bottom of the notch approximately lines up with the valence bandedge in the bulk . Furthermore , the bending should take place in the shortest possible distance so that ...
Contents
MetalSemiconductor SchottkyBarrier Diodes | 85 |
Microwave Applications of Diodes Varactors | 137 |
Bipolar Junction Transistors | 195 |
Copyright | |
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amplifier Appl applications avalanche bandgap barrier height bias capacitance capacitor cathode channel characteristics charge charge-coupled devices chip cm² cm³ collector depletion region detector Devices Meeting Technical diffusion Discuss doping drain effect efficiency electric Electron Devices Meeting emission emitter energy epitaxial field frequency GaAs gate Hall heterojunction IEEE International Electron IEEE Trans IGFET Impatt Impatt diodes impedance injection lasers input integrated circuit interface International Electron Devices layer Lett logic magnetic McGraw-Hill Meeting Technical Digest memory metal Microwave minority carrier modulation MOSFET n-type noise optical oscillator output oxide p-n junction parameters permission from IEEE Photovoltaic Phys Proc pulse recombination Reprinted with permission resistance Schottky barrier Schottky diode semiconductor sensor shown in Fig signal silicon SiO2 solar cells Solid-State Circuits Solid-State Electronics structure substrate surface switching temperature thermal thickness thyristor tunnel diode turn-on voltage wavelength York