Materials for Electrical and Electronic Contacts: Processing, Properties, and ApplicationsThe subject of electrical contact materials is of interdisciplinary nature, demanding knowledge of pure sciences such as physics and chemistry, and applied sciences like electrical and electronics engineering, metallurgical engineering and materials science, polymer science and engineering, ceramic science and engineering, over and above the knowledge of environmental aspects particularly when dealing with disposal of products. The aim of this book is to provide state of the art information on materials, and processing and applications of electrical and electronic contacts. The book will introduce the academic community to the subject of electrical and electronic materials. For the industrial users, it is a comprehensive source of information on manufacturing, evaluation and applications of electrical and electronic contact materials. The book would be of immense utility to scientists, engineers and technocrats engaged in the field of switchgear technology, integrated circuits and microelectronics. |
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Page 192
... layers of such materials . As shown in Fig.6.1 , the first layer is known as the substrate , upon which the subsequent layers are built to form an IC . It is a single crystal wafer of usually p - type silicon having a thickness of 100 ...
... layers of such materials . As shown in Fig.6.1 , the first layer is known as the substrate , upon which the subsequent layers are built to form an IC . It is a single crystal wafer of usually p - type silicon having a thickness of 100 ...
Page 202
... layer Photoresist p - type silicon ( a ) Photoresist n - type epitaxial layer p - type silicon ( b ) Oxide layer- ( c ) Metallization Photoresist layer Ultraviolet light ( d ) ( e ) n ( f ) Oxide layer npn p n р n р Window n ( g ) ( h ) ...
... layer Photoresist p - type silicon ( a ) Photoresist n - type epitaxial layer p - type silicon ( b ) Oxide layer- ( c ) Metallization Photoresist layer Ultraviolet light ( d ) ( e ) n ( f ) Oxide layer npn p n р n р Window n ( g ) ( h ) ...
Page 203
... layer . The MBE reaction is carried out at a temperature of the order of 600 to 900 ° C under ultra - high vacuum of 10 to 10-9 Pa . The film is evaporated and deposited one layer at a time and hence the name molecular beam epitaxy ...
... layer . The MBE reaction is carried out at a temperature of the order of 600 to 900 ° C under ultra - high vacuum of 10 to 10-9 Pa . The film is evaporated and deposited one layer at a time and hence the name molecular beam epitaxy ...
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Common terms and phrases
Ag-CdO Ag-SnO2 aluminium applications arc erosion atoms bonding cadmium cadmium oxide ceramic chemical chip circuit breakers components composite contacts conductive adhesives contact resistance contact surface copper density deposition developed devices diffusion electrical contact materials Electrical Contacts electroless electronic etching eutectic film flip-chip flux formation heating hence Holm Conf hybrid hybrid circuits IEEE integrated circuit interconnections intermetallic internal oxidation ions laser lead Mechanical Alloying melting point metallurgy method microelectronic microstructure molten solder Oxide Contact oxide particles package phase photoresist plating powder Powder Metallurgy Proc produced reduced reflow reflow soldering refractory metal sample Schematic semiconductor silicon silicon dioxide silver silver-cadmium oxide silver-metal oxide sintering Sn-Pb solder alloys solder bumps solder paste solution sputtering substrate surface mounting switchgear switching technique temperature thermal thickness tin-lead transistors tungsten typical vacuum vapor voltage wafer wave soldering welding wire wire bonding X-ray