Engineering Materials and Their ApplicationsThis edition of the classic text/reference book has been updated and revised to provide balanced coverage of metals, ceramics, polymers and composites. The first five chapters assess the different structures of metals, ceramics and polymers and how stress and temperature affect them. Demonstrates how to optimize a material's structure by using equilibrium data (phase diagrams) and nonequilibrium conditions, especially precipitation hardening. Discusses the structures, characteristics and applications of the important materials in each field. Considers topics common to all materials—corrosion and oxidation, failure analysis, processing of electrical and magnetic materials, materials selection and specification. Contains special chapters on advanced and large volume engineering materials plus abundant examples and problems. |
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Page 636
... semiconductors is shown below . Material Energy Gap , E ( 20 ° ) , eV Diamond Silicon Germanium 5.30 1.06 0.67 Tin is yet ... semiconductor ( extrinsic ) . ( b ) The electron from the phospho- rus shown in ( a ) is found just below the ...
... semiconductors is shown below . Material Energy Gap , E ( 20 ° ) , eV Diamond Silicon Germanium 5.30 1.06 0.67 Tin is yet ... semiconductor ( extrinsic ) . ( b ) The electron from the phospho- rus shown in ( a ) is found just below the ...
Page 663
... semiconductor A semiconductor material that is essentially pure and for which conductivity is a function of the temperature and the energy gap of the material . Metal A material with an unfilled valence band , leading to a very high con ...
... semiconductor A semiconductor material that is essentially pure and for which conductivity is a function of the temperature and the energy gap of the material . Metal A material with an unfilled valence band , leading to a very high con ...
Page 665
... semiconductor is produced by adding aluminum to silicon . The resistivity is 5 × 10-4 ohm - m , with an extrinsic carrier mobility of 0.1625 m2 / volt sec . Calculate : a . the density of the carriers b . the carriers per atom of added ...
... semiconductor is produced by adding aluminum to silicon . The resistivity is 5 × 10-4 ohm - m , with an extrinsic carrier mobility of 0.1625 m2 / volt sec . Calculate : a . the density of the carriers b . the carriers per atom of added ...
Contents
The Problem of Materials Selection and Development | 3 |
Metallic Structures The Unit Cell | 21 |
testing and effects of low temperatures 88 3 16 Effects of elevated | 91 |
Copyright | |
47 other sections not shown
Other editions - View all
Engineering Materials and Their Applications Richard Aloysius Flinn,Paul K. Trojan Snippet view - 1975 |
Engineering Materials and Their Applications Richard Aloysius Flinn,Paul K. Trojan Snippet view - 1975 |
Engineering Materials and Their Applications Richard Aloysius Flinn,Paul K. Trojan Snippet view - 1986 |
Common terms and phrases
alloy aluminum annealed anode atoms austenite bainite bond Calculate carbide carbon cast iron cathode ceramic Chapter chemical chromium cm³ coefficient cold-worked component composition compression concrete cooling copper corrosion crack crystal curve density diffusion discussed ductility effect elastic electrical electron hole electrons elements elongation energy engineering equilibrium ES/EJ eutectoid example fatigue Fe2+ ferrite fibers fracture toughness glass grain graphite H H H hardening hardness heat hydrogen important increase ions layer liquid load magnesium magnetic martensite material matrix melting metal microstructure modulus mold molecules nickel obtain oxide oxygen pearlite percent percentage phase diagram plane plastic polymer polymerization porosity produce properties quenched ratio reaction resistance Sections shown in Fig shows silica silicon solid solution specimen stainless steel strain structure surface Table tensile strength thermal thermoplastic thermosetting tion transformation unit cell volume weight yield strength zinc