## Proceedings of the International School of Physics "Enrico Fermi.", Volume 22N. Zanichelli, 1963 - Nuclear physics |

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Page 369

Part III:

solids have been the subject of a great many studies, both experimental and

theoretical. A number of materials have been investigated and a variety of

techniques ...

Part III:

**Diffusion**in Semiconductors. 1. - Introduction.**Diffusion**phenomena insolids have been the subject of a great many studies, both experimental and

theoretical. A number of materials have been investigated and a variety of

techniques ...

Page 376

Some other aspects of Li

Parts. There are a number of examples of substitutional impurities diffusing by the

vacancy mechanism in Ge and Si. These diffusivities are, of course, many ...

Some other aspects of Li

**diffusion**will be discussed later in this, and the next two,Parts. There are a number of examples of substitutional impurities diffusing by the

vacancy mechanism in Ge and Si. These diffusivities are, of course, many ...

Page 377

The ratios of the

since the

experiments carried out involved the determination of the self-

The ratios of the

**diffusion**coefficients in the two materials will be given by (23)since the

**diffusion**coefficient is proportional to the vacancy concentration. Theexperiments carried out involved the determination of the self-

**diffusion**of Ge, ...### What people are saying - Write a review

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### Common terms and phrases

absorption acceptor approximation assumed band edge band structure Brillouin zone calculated carrier centre charge Chem coefficient components compound concentration conduction band consider constant corresponding crystal curves cyclotron resonance degenerate density diffusion direct transition discussed donor doping effective mass electric field energy gap energy surfaces equation equilibrium example exciton experimental expression Faraday rotation foreign atoms free electron frequency germanium given hence holes imperfections impurity indium antimonide InSb interaction interband ionization ions Journ lattice levels linear liquid magnetic field matrix measurements melt mobility momentum obtained optical p-type phonon Phys potential pressure quantum range reciprocal lattice region samples scattering semiconductors shown in Fig spherical spin spin-orbit structure elements symmetry tensor theory thermodynamic thermodynamic potentials tion transverse valence band valley Voigt effect wave functions wave vector Zeeman effect zero zone