## Proceedings of the International School of Physics "Enrico Fermi.", Volume 22N. Zanichelli, 1963 - Nuclear physics |

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Page 184

Minority carrier exclusion. Consider a bar (one-dimensional geometry) containing

an N+N junction, the N+ end being made positive. If the N+

N+ almost no field will appear in this

Minority carrier exclusion. Consider a bar (one-dimensional geometry) containing

an N+N junction, the N+ end being made positive. If the N+

**region**is sufficientlyN+ almost no field will appear in this

**region**, almost all the voltage drop being in ...Page 185

where P0L is the equilibrium density of holes in the N

~ 2 10s cm* V-1 s-1 and t~10~'s we find which is a very substantial reduction.

Naturally this low density will not be maintained along the entire bar, due to

carrier ...

where P0L is the equilibrium density of holes in the N

**region**. Putting E~10Vcm-1,~ 2 10s cm* V-1 s-1 and t~10~'s we find which is a very substantial reduction.

Naturally this low density will not be maintained along the entire bar, due to

carrier ...

Page 187

length bar will be almost wholly depleted of minority carriers though, due to

thermal generation alone, there will be a build up of carriers going away from the

N

when ...

length bar will be almost wholly depleted of minority carriers though, due to

thermal generation alone, there will be a build up of carriers going away from the

N

**region**near the N+N junction. Avalanche ionization will become importantwhen ...

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absorption acceptor approximation assumed band edge band structure Brillouin zone calculated carrier centre charge Chem coefficient components compound concentration conduction band consider constant corresponding crystal curves cyclotron resonance degenerate density diffusion direct transition discussed donor doping effective mass electric field energy gap energy surfaces equation equilibrium example exciton experimental expression Faraday rotation foreign atoms free electron frequency germanium given hence holes imperfections impurity indium antimonide InSb interaction interband ionization ions Journ lattice levels linear liquid magnetic field matrix measurements melt mobility momentum obtained optical p-type phonon Phys potential pressure quantum range reciprocal lattice region samples scattering semiconductors shown in Fig spherical spin spin-orbit structure elements symmetry tensor theory thermodynamic thermodynamic potentials tion transverse valence band valley Voigt effect wave functions wave vector Zeeman effect zero zone