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Tj^ ANODE DEVICE BLOCKING CAPABILITY = 600 VOLTS I0T(AI FORWARD
VOLTAGE DROP. FIG. 3. Cross-sectional structure, output characteristics, and
symbols for bipolar power devices. FIG. 9. Cross-sectional (a) DMOS and (b)
DEVICE BLOCKING CAPABILITY = 600 VOLTS I0T(AI FORWARD VOLTAGE
DROP iVOLTSi FIG. 12. A comparison of the forward conduction characteristics of
three IGTs with the bipolar transistor (BJT) and the power MOSFET. [Mti^ '"r" "I r* ...
supporting the high voltage laterally. This design approach is illustrated in Fig. 14
. In this technology, N+ buried layers and sinkers are used to suppress latch-up
and prevent minority carrier injection into the substrate. A unique high voltage ...
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Seismology Observational 17 Stochastic Description
Seismology Theoretical 47 Solar Chimneys
18 other sections not shown