Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 161
... ( BCB ) and Parylene - N ( PA - N ) films after chemical - mechanical polishing ( CMP ) is influenced by 3 factors : slurry composition , quality of the as - deposited film or post - deposition treated film , and polishing time . The ...
... ( BCB ) and Parylene - N ( PA - N ) films after chemical - mechanical polishing ( CMP ) is influenced by 3 factors : slurry composition , quality of the as - deposited film or post - deposition treated film , and polishing time . The ...
Page 162
In this paper , the surface qualities of BCB and PA - N films after CMP are compared . The difference between BCB polishing and PA - N polishing is due to their different chemical structures . EXPERIMENT - Parylene - N films were vapor ...
In this paper , the surface qualities of BCB and PA - N films after CMP are compared . The difference between BCB polishing and PA - N polishing is due to their different chemical structures . EXPERIMENT - Parylene - N films were vapor ...
Page 167
... BCB film and polished BCB films ( polishing time is 1 s and 20 s , respectively ) . It is clear that with the increase in polishing time , the single C - C peak at 285 eV for as - spin - on film changes into two peaks . One peak is ...
... BCB film and polished BCB films ( polishing time is 1 s and 20 s , respectively ) . It is clear that with the increase in polishing time , the single C - C peak at 285 eV for as - spin - on film changes into two peaks . One peak is ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch