Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 155
... process , especially when trying to achieve a target polishing thickness . Scratching is another critical issue in low - k dielectric film CMP planarization due to the lower hardness relative to silicon dioxide . This research relates ...
... process , especially when trying to achieve a target polishing thickness . Scratching is another critical issue in low - k dielectric film CMP planarization due to the lower hardness relative to silicon dioxide . This research relates ...
Page 157
... CMP , the slurry flow rate typically is 100 ml / min and could serve as a ... process , is held face down by the carrier which presses the wafer against a ... CMP process with AE monitoring All experiments used unpatterned wafers with low ...
... CMP , the slurry flow rate typically is 100 ml / min and could serve as a ... process , is held face down by the carrier which presses the wafer against a ... CMP process with AE monitoring All experiments used unpatterned wafers with low ...
Page 158
... CMP process Fig . 3 Typical AErms signal in a CMP process rms ( v ) 0.5 0.45 Load = 0.15psi 0.4 0.35 0.3 0.25 0.2 0.15- 0.1 0.05 Typical AE rms signal 10 15 20 25 30 Running time ( s ) Amplitude ( V ) 5 4 ო 2 - 0 100 200 300 400 ...
... CMP process Fig . 3 Typical AErms signal in a CMP process rms ( v ) 0.5 0.45 Load = 0.15psi 0.4 0.35 0.3 0.25 0.2 0.15- 0.1 0.05 Typical AE rms signal 10 15 20 25 30 Running time ( s ) Amplitude ( V ) 5 4 ო 2 - 0 100 200 300 400 ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch