Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 36
Page 82
RESULTS AND DISCUSSION 1 . Interface characteristics Adhesion h of
Curificantly lareth ( critical 1 Figure 1 shows the adhesion strength ( critical load
for delamination ) of Cu and CuTi films on PI . CuTi films have significantly large
critical ...
RESULTS AND DISCUSSION 1 . Interface characteristics Adhesion h of
Curificantly lareth ( critical 1 Figure 1 shows the adhesion strength ( critical load
for delamination ) of Cu and CuTi films on PI . CuTi films have significantly large
critical ...
Page 233
... hipot tester . Measurements where taken at four separate points on the wafer .
Five wafers of each type were used . The mean of the twenty readings is reported
. RESULTS AND DISCUSSION Adhesion Stud pull test results are presented 233
.
... hipot tester . Measurements where taken at four separate points on the wafer .
Five wafers of each type were used . The mean of the twenty readings is reported
. RESULTS AND DISCUSSION Adhesion Stud pull test results are presented 233
.
Page 280
Sidewall film thickness was measured at a point halfway down the sidewall of the
underlying feature . RESULTS AND DISCUSSION Effect of RI and Stress On Wet
Etch Rate . The quality of FSG films deposited on the sidewall of a feature is not ...
Sidewall film thickness was measured at a point halfway down the sidewall of the
underlying feature . RESULTS AND DISCUSSION Effect of RI and Stress On Wet
Etch Rate . The quality of FSG films deposited on the sidewall of a feature is not ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |