Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 7
Page 241
... FTEOS films . Figure 3 shows the dielectric constant ( Ê ) values as obtained by the capacitance- voltage ( C - V ) technique at 1MHz on MOS structures for the SiF , doped FTEOS films . The thickness of FTEOS film was kept constant at ...
... FTEOS films . Figure 3 shows the dielectric constant ( Ê ) values as obtained by the capacitance- voltage ( C - V ) technique at 1MHz on MOS structures for the SiF , doped FTEOS films . The thickness of FTEOS film was kept constant at ...
Page 245
... film and makes them unstable . Figure 8 shows the TDS spectrum of a TEFS based FTEOS film having a Si - F concentration of 1 % . These films show the outgassing of HF at 500 ° C . Compared to SiF4 doped FTEOS films , these films show ...
... film and makes them unstable . Figure 8 shows the TDS spectrum of a TEFS based FTEOS film having a Si - F concentration of 1 % . These films show the outgassing of HF at 500 ° C . Compared to SiF4 doped FTEOS films , these films show ...
Page 247
CONCLUSIONS The SiF4 based FTEOS films are stable up to a higher Si - F concentration and higher annealing temperatures as compared to the TEFS based films . However , the gap fill capability of TEFS films is better . The SiF4 based FTEOS ...
CONCLUSIONS The SiF4 based FTEOS films are stable up to a higher Si - F concentration and higher annealing temperatures as compared to the TEFS based films . However , the gap fill capability of TEFS films is better . The SiF4 based FTEOS ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch