Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 162
In this paper , the surface qualities of BCB and PA - N films after CMP are
compared . The difference between BCB polishing and PA - N polishing is due to
their different chemical structures . EXPERIMENT Parylene - N films were vapor ...
In this paper , the surface qualities of BCB and PA - N films after CMP are
compared . The difference between BCB polishing and PA - N polishing is due to
their different chemical structures . EXPERIMENT Parylene - N films were vapor ...
Page 165
Both slurries are not suitable for PA - N polishing , due to the high RMS
roughness . Slurry - 4 , slurry - 5 , and slurry - 7 do not affect the surface structure
for PA - N films , while slurry - 3 , slurry - 6 , and slurry - 8 increase the oxygen
content ...
Both slurries are not suitable for PA - N polishing , due to the high RMS
roughness . Slurry - 4 , slurry - 5 , and slurry - 7 do not affect the surface structure
for PA - N films , while slurry - 3 , slurry - 6 , and slurry - 8 increase the oxygen
content ...
Page 169
PA - N and BCB are very different polymers due to their chemical structures . PA -
N is a linear crystalline polymer with high molecular weight . Its VDP formation
and chemical structure is shown in Fig . 3 . The VDP gas monomer is p - xylylene
.
PA - N and BCB are very different polymers due to their chemical structures . PA -
N is a linear crystalline polymer with high molecular weight . Its VDP formation
and chemical structure is shown in Fig . 3 . The VDP gas monomer is p - xylylene
.
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer