Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 17
Page 180
... PECVD IELD 50 0.75 2.2 $ 3.3 PECVD a - CF 25 0.75 $ 5.2 PECVD cap 85 0.10 $ 1.8 The model shows that , for an individual deposition , the SOD material costs dominate other inputs and result in greater costs than most CVD processes . An ...
... PECVD IELD 50 0.75 2.2 $ 3.3 PECVD a - CF 25 0.75 $ 5.2 PECVD cap 85 0.10 $ 1.8 The model shows that , for an individual deposition , the SOD material costs dominate other inputs and result in greater costs than most CVD processes . An ...
Page 262
... PECVD system . Either SiF4 or C2F6 gas was chosen as the dopant . The doping level was fixed at SiF / SiO 2.5 % unless specified in the text . The basic film properties of the PECVD deposited FSG are published elsewhere . ( 6,7 ) 2.1 ...
... PECVD system . Either SiF4 or C2F6 gas was chosen as the dopant . The doping level was fixed at SiF / SiO 2.5 % unless specified in the text . The basic film properties of the PECVD deposited FSG are published elsewhere . ( 6,7 ) 2.1 ...
Page 265
... PECVD FSG film with a doping level of SiF / SiO = 2.5 % , a PECVD silicon nitride film not thinner than 1500 Å is needed at the ILD level to prevent the fluorine atoms from diffusing to the transistors . Similarly , a PECVD TEOS oxide ...
... PECVD FSG film with a doping level of SiF / SiO = 2.5 % , a PECVD silicon nitride film not thinner than 1500 Å is needed at the ILD level to prevent the fluorine atoms from diffusing to the transistors . Similarly , a PECVD TEOS oxide ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch