Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page xi
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS Volume 460— High - Temperature Ordered Intermetallic Alloys VII , C.C. Koch , C.T. Liu , N.S. Stoloff , A. Wanner , 1997 , ISBN : 1-55899-364-9 Volume 461- Morphological Control in ...
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS Volume 460— High - Temperature Ordered Intermetallic Alloys VII , C.C. Koch , C.T. Liu , N.S. Stoloff , A. Wanner , 1997 , ISBN : 1-55899-364-9 Volume 461- Morphological Control in ...
Page 129
... Materials Research and Strategic Technologies , Sector Technology Group , Motorola , Inc. , 3501 Ed Bluestein Boulevard , Austin , TX 78721 ABSTRACT Fluorinated polyimide can potentially replace TEOS as an interlevel dielectric in ...
... Materials Research and Strategic Technologies , Sector Technology Group , Motorola , Inc. , 3501 Ed Bluestein Boulevard , Austin , TX 78721 ABSTRACT Fluorinated polyimide can potentially replace TEOS as an interlevel dielectric in ...
Page 161
Most CMP research has concentrated on metals or silicon oxide ( SiO2 ) ( 3-8 ] , with only preliminary results for polymers to - date ( 9,10,11 ] . Polymers are candidates for interlayer dielectrics ( ILDs ) because of their low ...
Most CMP research has concentrated on metals or silicon oxide ( SiO2 ) ( 3-8 ] , with only preliminary results for polymers to - date ( 9,10,11 ] . Polymers are candidates for interlayer dielectrics ( ILDs ) because of their low ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer