Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 241
12 10 Atomic [ F ] % ( XPS ) 2 o 0.0 0.6 1.0 2.0 2.6 3.0 1.5 ( Si - Fy / ( Si - O + SI - F ) % ( FTIR ) Fig . 2. Correlation of Si - F % ( FTIR ) with atomic [ F ] % ( RBS ) for FTEOS films . 4 Figure 3 shows the dielectric constant ( K ) ...
12 10 Atomic [ F ] % ( XPS ) 2 o 0.0 0.6 1.0 2.0 2.6 3.0 1.5 ( Si - Fy / ( Si - O + SI - F ) % ( FTIR ) Fig . 2. Correlation of Si - F % ( FTIR ) with atomic [ F ] % ( RBS ) for FTEOS films . 4 Figure 3 shows the dielectric constant ( K ) ...
Page 242
The lack of a decrease in k with increasing Si - F concentration is an indication of the instability of these films . Figure 4 shows the effect of increasing F concentration on the Si - F peak intensity , as obtained by FTIR for SiFa ...
The lack of a decrease in k with increasing Si - F concentration is an indication of the instability of these films . Figure 4 shows the effect of increasing F concentration on the Si - F peak intensity , as obtained by FTIR for SiFa ...
Page 274
Fluorinated oxides with lower concentrations of F can then be described as a homogeneous alloy mixture of SiO2 and ... The number of Si - O bonds / Si atom ( Nsi - o ) is equal to ( 6-2x ) / ( 2 - x ) , and the number of Si - F bonds ...
Fluorinated oxides with lower concentrations of F can then be described as a homogeneous alloy mixture of SiO2 and ... The number of Si - O bonds / Si atom ( Nsi - o ) is equal to ( 6-2x ) / ( 2 - x ) , and the number of Si - F bonds ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer