Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 273
... Si - O - F . Alloying of F atoms into plasma - deposited SiO2 films leads to major changes in the SiO2 bond - stretching and -bending infrared bands accounting for a significant fraction of the reduction in the dielectric constant ...
... Si - O - F . Alloying of F atoms into plasma - deposited SiO2 films leads to major changes in the SiO2 bond - stretching and -bending infrared bands accounting for a significant fraction of the reduction in the dielectric constant ...
Page 274
... Si to O is also determined . The number of Si - O bonds / Si atom ( Nsi - 0 ) is equal to ( 6-2x ) / ( 2 - x ) , and the number of Si - F bonds / Si atom ( Nsi - F ) is equal to ( 2-2x ) / ( 2 - x ) . Figure 1 ( a ) contains Nsi - o and ...
... Si to O is also determined . The number of Si - O bonds / Si atom ( Nsi - 0 ) is equal to ( 6-2x ) / ( 2 - x ) , and the number of Si - F bonds / Si atom ( Nsi - F ) is equal to ( 2-2x ) / ( 2 - x ) . Figure 1 ( a ) contains Nsi - o and ...
Page 278
... Si - O - Si vibrational mode contributions to Es from the substitution of one F atom for one O atom is insufficient to account for the relatively large decreases in Es . For example , in a 12 at . % F alloy which exceeds the ...
... Si - O - Si vibrational mode contributions to Es from the substitution of one F atom for one O atom is insufficient to account for the relatively large decreases in Es . For example , in a 12 at . % F alloy which exceeds the ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch