Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 13
Page 246
... SiF4 based films . 21 ML8275T12f 22113 31 - OCT - 95 BI ML8275T12 22:12 31 - OCT - 95 MR 77 25 KV X38.8k Fig . 9. Intermetal gap fill using SiF , based FTEOS film ( SiF = 2.5 % ) . PAS 123A 24 - JAN - 96 123A 24 - JAN - 9 SS 2 25.0kV ...
... SiF4 based films . 21 ML8275T12f 22113 31 - OCT - 95 BI ML8275T12 22:12 31 - OCT - 95 MR 77 25 KV X38.8k Fig . 9. Intermetal gap fill using SiF , based FTEOS film ( SiF = 2.5 % ) . PAS 123A 24 - JAN - 96 123A 24 - JAN - 9 SS 2 25.0kV ...
Page 247
CONCLUSIONS The SiF4 based FTEOS films are stable up to a higher Si - F concentration and higher annealing temperatures as compared to the TEFS based films . However , the gap fill capability of TEFS films is better . The SiF4 based ...
CONCLUSIONS The SiF4 based FTEOS films are stable up to a higher Si - F concentration and higher annealing temperatures as compared to the TEFS based films . However , the gap fill capability of TEFS films is better . The SiF4 based ...
Page 262
... SiF4 or C2F6 gas was chosen as the dopant . The doping level was fixed at SiF / SiO 2.5 % unless specified in the text . The basic film properties of the PECVD deposited FSG are published elsewhere . ( 6,7 ) 2.1 Chemical Reaction with ...
... SiF4 or C2F6 gas was chosen as the dopant . The doping level was fixed at SiF / SiO 2.5 % unless specified in the text . The basic film properties of the PECVD deposited FSG are published elsewhere . ( 6,7 ) 2.1 Chemical Reaction with ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
34 other sections not shown
Other editions - View all
Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch