Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 19
We have found 3 failure modes : 1 ) capping SiO2 layer peels off , 2 ) thickness
reduction of a - C : F by decomposition , and 3 ) etching phenomena at the
interface between SiO2 and a - C : F by CFx outgassing from a - C : F . The
outgassed ...
We have found 3 failure modes : 1 ) capping SiO2 layer peels off , 2 ) thickness
reduction of a - C : F by decomposition , and 3 ) etching phenomena at the
interface between SiO2 and a - C : F by CFx outgassing from a - C : F . The
outgassed ...
Page 20
4 , which is much lower than conventional SiO2 dielectrics ( ε = 4 . 0 - 4 . 5 ) . In
this study , we focused on the improvement of the adhesion between a - C : F and
SiO2 using HDP - CVD . This study describes characterization of adhesion failure
...
4 , which is much lower than conventional SiO2 dielectrics ( ε = 4 . 0 - 4 . 5 ) . In
this study , we focused on the improvement of the adhesion between a - C : F and
SiO2 using HDP - CVD . This study describes characterization of adhesion failure
...
Page 22
Therefore , silicon oxide deposition using a high bias - added process was
indispensable to achieve good protection from oxygen plasma ambient in order
to form void - free SiO2 . 2 ) Decomposition failure mode of Sio , capped a - C : F
The a ...
Therefore , silicon oxide deposition using a high bias - added process was
indispensable to achieve good protection from oxygen plasma ambient in order
to form void - free SiO2 . 2 ) Decomposition failure mode of Sio , capped a - C : F
The a ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |