Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 19
... films sandwiched between layers of SiO2 have been proposed as an interlayer dielectric ( ILD ) structure in order to enhance resistance to oxygen plasma . This study describes adhesion failure mechanisms for the sandwiched fluorinated ...
... films sandwiched between layers of SiO2 have been proposed as an interlayer dielectric ( ILD ) structure in order to enhance resistance to oxygen plasma . This study describes adhesion failure mechanisms for the sandwiched fluorinated ...
Page 173
... films are deduced by means of wafer curvature measurement . The same ... SiO2 can be quantified . The thermomechanical properties of this material ... films using the bending beam technique [ 3 ] . This is achieved by characterizing the ...
... films are deduced by means of wafer curvature measurement . The same ... SiO2 can be quantified . The thermomechanical properties of this material ... films using the bending beam technique [ 3 ] . This is achieved by characterizing the ...
Page 273
... SiO2 films leads to major changes in the SiO2 bond - stretching and -bending infrared bands accounting for a significant fraction of the reduction in the dielectric constant . These changes are explained by F induced modifications of ...
... SiO2 films leads to major changes in the SiO2 bond - stretching and -bending infrared bands accounting for a significant fraction of the reduction in the dielectric constant . These changes are explained by F induced modifications of ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch