Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 69
It was found that desorbed F atoms from the SiOF film react with Ti silicide film
resulting in forming SiF4 gas . The evolution of SiF4 gas caused the peel - off of
the films . INTRODUCTION As semiconductor integrated circuits become finer in
...
It was found that desorbed F atoms from the SiOF film react with Ti silicide film
resulting in forming SiF4 gas . The evolution of SiF4 gas caused the peel - off of
the films . INTRODUCTION As semiconductor integrated circuits become finer in
...
Page 72
4 TDS spectra for mass number 19 ( F ) Figure5 ( a ) and 5 ( b ) show SIMS
analysis data for as deposited SiOF films under condition A and condition B ,
respectively on the BPSG / TiSiz stacked films . There is no difference between
condition ...
4 TDS spectra for mass number 19 ( F ) Figure5 ( a ) and 5 ( b ) show SIMS
analysis data for as deposited SiOF films under condition A and condition B ,
respectively on the BPSG / TiSiz stacked films . There is no difference between
condition ...
Page 295
Figure 7 shows the AES depth profile of the Cu / TiN / SiOF / Si system annealed
at ( a ) 500°C , ( b ) 600°C , and ( c ) 700 °C , respectively to examine the
interdiffusion and reactions at each interface in the multilayer . The SiOF film
underwent ...
Figure 7 shows the AES depth profile of the Cu / TiN / SiOF / Si system annealed
at ( a ) 500°C , ( b ) 600°C , and ( c ) 700 °C , respectively to examine the
interdiffusion and reactions at each interface in the multilayer . The SiOF film
underwent ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer