Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 69
THE INFLUENCE OF FLUORINE DESORPTION FROM ECR - CVD SiOF FILM Tatsuya USAMI , Hiraku ISHIKAWA , and Hideki GOMI ULSI ... 229 JAPAN ABSTRACT The influence of fluorine desorption from SiOF films deposited by biased ECR - CVD was studied .
THE INFLUENCE OF FLUORINE DESORPTION FROM ECR - CVD SiOF FILM Tatsuya USAMI , Hiraku ISHIKAWA , and Hideki GOMI ULSI ... 229 JAPAN ABSTRACT The influence of fluorine desorption from SiOF films deposited by biased ECR - CVD was studied .
Page 72
4 TDS spectra for mass number 19 ( F ) Figure5 ( a ) and 5 ( b ) show SIMS analysis data for as deposited SiOF films under condition A and condition B , respectively on the BPSG / TiSiz stacked films . There is no difference between ...
4 TDS spectra for mass number 19 ( F ) Figure5 ( a ) and 5 ( b ) show SIMS analysis data for as deposited SiOF films under condition A and condition B , respectively on the BPSG / TiSiz stacked films . There is no difference between ...
Page 295
The SiOF film underwent the post plasma treatment for 5 min and the thickness of Cu and TiN were 500 Å and 400 Å , respectively . The specimens were observed to be nearly stable up to the annealing temperature of 600 ° C . However ...
The SiOF film underwent the post plasma treatment for 5 min and the thickness of Cu and TiN were 500 Å and 400 Å , respectively . The specimens were observed to be nearly stable up to the annealing temperature of 600 ° C . However ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer