Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 69
... films deposited by biased ECR - CVD was studied . It was found that desorbed F atoms from the SiOF film react with Ti silicide film resulting in forming SiF4 gas . The evolution ... SIOF Film Tatsuya Usami, Hiraku Ishikawa, and Hideki Gomi.
... films deposited by biased ECR - CVD was studied . It was found that desorbed F atoms from the SiOF film react with Ti silicide film resulting in forming SiF4 gas . The evolution ... SIOF Film Tatsuya Usami, Hiraku Ishikawa, and Hideki Gomi.
Page 72
... SiOF films under condition A and condition B , respectively on the BPSG / TiSi2 stacked films . There is no difference between condition A and condition B. F conc . ( atoms / cc ) 1.00E + 23 1.00E + 22 1.00E + 21 SiOF BPSG 1.00E + 20 ...
... SiOF films under condition A and condition B , respectively on the BPSG / TiSi2 stacked films . There is no difference between condition A and condition B. F conc . ( atoms / cc ) 1.00E + 23 1.00E + 22 1.00E + 21 SiOF BPSG 1.00E + 20 ...
Page 295
... silicon and fluorine into the TiN layer is observed in the specimen annealed at 700 ° C ; some copper is also seen to diffuse into the SiOF films through the TiN layer . Nevertheless , TiN seemed to do a good job in inhibiting the silicon ...
... silicon and fluorine into the TiN layer is observed in the specimen annealed at 700 ° C ; some copper is also seen to diffuse into the SiOF films through the TiN layer . Nevertheless , TiN seemed to do a good job in inhibiting the silicon ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch