Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 118
Table III . Electrical characteristics of FPI ( with gap fill additive system 2 ) compared to conventional PE - TEOS ... 4.56 8.84 6.36 4.35 +/- 0.13 The capacitance shift parameter in Table III refers to the difference in capacitance ...
Table III . Electrical characteristics of FPI ( with gap fill additive system 2 ) compared to conventional PE - TEOS ... 4.56 8.84 6.36 4.35 +/- 0.13 The capacitance shift parameter in Table III refers to the difference in capacitance ...
Page 165
increases the removal rate ( Table II ) . Both slurries are not suitable for PA - N polishing , due to the high RMS roughness . Slurry - 4 , slurry - 5 , and slurry - 7 do not affect the surface structure for PA - N films , while slurry ...
increases the removal rate ( Table II ) . Both slurries are not suitable for PA - N polishing , due to the high RMS roughness . Slurry - 4 , slurry - 5 , and slurry - 7 do not affect the surface structure for PA - N films , while slurry ...
Page 252
Thermal imidization has been investigated by DSC analysis and volatile products were quantified by TGA as illustrated in Table II . -2 H2N-NO2 HN NH - A - Awwwwww ( 4 ) HN NH O2N NO2 Table II . Thermal data of polyamic arylamide ...
Thermal imidization has been investigated by DSC analysis and volatile products were quantified by TGA as illustrated in Table II . -2 H2N-NO2 HN NH - A - Awwwwww ( 4 ) HN NH O2N NO2 Table II . Thermal data of polyamic arylamide ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer