Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 118
... Table III . Table III . Electrical characteristics of FPI ( with gap fill additive system 2 ) compared to conventional PE - TEOS dielectric Dielectric FPI + Add . 2 PE - TEOS Leakage Current ( pA ) Line - to - line Capacitance ( pF ) ...
... Table III . Table III . Electrical characteristics of FPI ( with gap fill additive system 2 ) compared to conventional PE - TEOS dielectric Dielectric FPI + Add . 2 PE - TEOS Leakage Current ( pA ) Line - to - line Capacitance ( pF ) ...
Page 180
... Table II : The average data inputs to the cost model . Throughput ( wafers / hour ) Precursor + Clean ( $ / wafer ) ... ( Table III ) . The cost of any via treatment is assumed to be equal to PECVD cap deposition . Since it is doubtful that ...
... Table II : The average data inputs to the cost model . Throughput ( wafers / hour ) Precursor + Clean ( $ / wafer ) ... ( Table III ) . The cost of any via treatment is assumed to be equal to PECVD cap deposition . Since it is doubtful that ...
Page 252
... ( Table III ) . Table III . Basic imidization rates of BTDA / ODA polyamic amide Base p - nitroaniline % after imidization ' BuOK DBU 99 94.5 Triethylamine K2CO ; 90 96.5 Table III shows that the yield of p - nitroaniline formation is ...
... ( Table III ) . Table III . Basic imidization rates of BTDA / ODA polyamic amide Base p - nitroaniline % after imidization ' BuOK DBU 99 94.5 Triethylamine K2CO ; 90 96.5 Table III shows that the yield of p - nitroaniline formation is ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch