Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 36
... Technology Laboratories at Hewlett - Packard for their assistance . REFERENCES [ 1 ] G. S. Oehrlein , Y. Zhang , D. Vender , and M. Haverlag , J. Vac . Sci . and Technol . A , 12 , 323 ( 1994 ) . [ 2 ] S. M. Sze , VLSI Technology ...
... Technology Laboratories at Hewlett - Packard for their assistance . REFERENCES [ 1 ] G. S. Oehrlein , Y. Zhang , D. Vender , and M. Haverlag , J. Vac . Sci . and Technol . A , 12 , 323 ( 1994 ) . [ 2 ] S. M. Sze , VLSI Technology ...
Page 182
... Technologies USA ) , Richard Gottscho ( Lam Research ) , Wally Fry ( Novellus Systems ) , James Banas ( Semiconductor ... Technology Roadmap for Semiconductors , Semiconductor Industry Association , 1994 . 2 T. Seidel and B. Zhao , Mater ...
... Technologies USA ) , Richard Gottscho ( Lam Research ) , Wally Fry ( Novellus Systems ) , James Banas ( Semiconductor ... Technology Roadmap for Semiconductors , Semiconductor Industry Association , 1994 . 2 T. Seidel and B. Zhao , Mater ...
Page 247
... technology . Hence , films deposited using high density plasma ( HDP ) CVD systems are required to fill intermetal gaps for ≤0.35 μm technology because of their better gap fill capability . However , we believe that the FTEOS films are ...
... technology . Hence , films deposited using high density plasma ( HDP ) CVD systems are required to fill intermetal gaps for ≤0.35 μm technology because of their better gap fill capability . However , we believe that the FTEOS films are ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch